Vishay Introduces New Common-Drain Dual N-Channel 60 V MOSFET

Recently, Vishay Intertechnology, Inc. announced that it has introduced a new thermally enhanced PowerPAK® 1212-8SCD package with a new common-drain dual N-channel 60 V MOSFET-SiSF20DN. Vishay Siliconix SiSF20DN is the industry's lowest RS-S (ON) 60 V common-drain device specifically designed to increase the power density and efficiency of battery management systems, in-line and wireless chargers, DC / DC converters, and power supplies.

The dual-chip MOSFET released recently has a typical RS-S (ON) value as low as 10 mW at 10V, which is the 60 V device with the lowest on-resistance in a 3mm x 3mm package, which is 42.5% lower than this second-ranked product. , 89% lower than Vishay's previous generation devices.

Thereby reducing the voltage drop of the power channel, reducing power consumption and improving efficiency. To increase power density, SiSF20DN's RS1S2 (ON) area product is 46.6% lower than the second-ranked replacement MOSFET, and even includes larger 6 mm x 5 mm package solutions.

 In order to save PCB space, reduce the number of components and simplify the design, the device uses an optimized package structure. Two monolithic integrated TrenchFET? The fourth generation n-channel MOSFET uses a common drain configuration. SiSF20DN source contacts are arranged side by side, increasing the connection to increase the PCB contact area, and further reducing the resistivity compared to traditional dual package devices. This design makes MOSFETs suitable for 24 V system and two-way switches for industrial applications, including factory automation, power tools, drones, motor drivers, white goods, robotics, security / surveillance and smoke alarms.

SiSF20DN is 100% Rg and UIS tested, RoHS compliant and halogen-free.

The new MOSFET is now available for sampling and mass production. The lead time for bulk orders is 30 weeks.